White light-emitting diode and its light conversion layer

Details White light-emitting diode and its light conversion layer White light-emitting diode and its light conversion layer

2009-07-06

2011-10-25

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S094000, C257SE33061, C438S022000

Reexamination Certificate

active

08044410

ABSTRACT:
The present invention discloses a white light-emitting diode based on In—Ga—N nitride heterojunction is characterized by that the light-emitting diode has primary blue light emission of a specific wavelength and a light conversion layer so as to generate white light. Further, the present invention also discloses a light conversion layer and its fluorine oxygen garnet phosphor powder.

REFERENCES:
patent: 6538371 (2003-03-01), Duggal et al.
patent: 2009/0179212 (2009-07-01), Naum et al.
patent: 2009/0218585 (2009-09-01), Zhuang et al.
patent: 49020087 (1974-02-01), None

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