White light emitting device and method of making same

Details White light emitting device and method of making same White light emitting device and method of making same

2007-04-24

2007-04-24

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Making emissive array

C438S034000, C257S088000, C257S089000

Reexamination Certificate

active

11398262

ABSTRACT:
A white-light emitting device comprising a first PRS-LED and a second PRS-LED. The first PRS-LED has a primary light source to emit blue light and a secondary light source to emit red light responsive to the blue light; and the second PRS-LED has a primary light source to emit green light and a secondary light source for emitting red light responsive to the green light. Each of the primary light sources is made from an InGaN layer disposed between a p-type GaN layer and an n-type GaN layer. The secondary light sources are made from AlGaInP. The primary light source and the secondary light source can be disposed on opposite sides of a sapphire substrate. Alternatively, the second light source is disposed on the n-type GaN layer of the primary light source. The second light sources may comprise micro-rods of AlGaInP of same or different compositions.

REFERENCES:
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5952680 (1999-09-01), Strite
patent: 6395564 (2002-05-01), Huang
patent: 6513949 (2003-02-01), Marshall et al.
patent: 6518598 (2003-02-01), Chen
patent: 6576933 (2003-06-01), Sugawara et al.
patent: 6603146 (2003-08-01), Hata et al.
patent: 6692136 (2004-02-01), Marshall et al.
patent: 6765234 (2004-07-01), Koide
patent: 6872607 (2005-03-01), Tanaka
patent: 2002/0068373 (2002-06-01), Lo et al.
patent: 2004/0089864 (2004-05-01), Chi et al.
patent: 2004/0090779 (2004-05-01), Ou et al.
Applied Physics Letters, vol. 75, No. 2; R. H. Horng et al.; “AlGaInP/AuBe/Glass Light-Emitting Diodes Fabricated by Wafer Bonding Technology”; pp. 154-155; Jul. 12, 1999.
IEEE, 0-7803-5410-9/99; X. Guo et al.; “Photon Recycling Semiconductor Light Emitting Diode”; pp. 600-603; 1999.
Japan J. Applied Physics, vol. 39, Part 1, No. 4B; R. H. Horng et al.; “Wafer-Bonded AlGaInP/Au/AuBe/SiO2/Si Light-Emitting Diodes”; pp. 2357-2359; Apr. 2000.

Affiliated with

Also associated with

Rating

White light emitting device and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with White light emitting device and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and White light emitting device and method of making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3750595