Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-02-22
2005-02-22
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S103000, C257S613000, C257S615000, C257S498000, C257S499000, C257S501000, C257S502000, C257S503000
Reexamination Certificate
active
06858869
ABSTRACT:
An ultraviolet type white color light emitting device (Q) including a 340 nm-400 nm ultraviolet InGaN-LED, a first fluorescence plate of ZnS doped with more than 1×1017cm−3Al, In, Ga, Cl, Br or I for absorbing ultraviolet rays and producing blue light (fluorescence), a second fluorescence plate of ZnSSe or ZnSe doped with more than 1×1017cm−3Al, In, Ga, Cl, Br or I for absorbing the blue light, producing yellow light (fluorescence) and synthesizing white color light by mixing the yellow light with the blue light.A blue light type white color light emitting device (R) including a 410 nm-470 nm blue light InGaN-LED, a fluorescence plate of ZnSxSe1-x(untreated 0.2≦x≦0.6; heat-treated 0.3≦x≦0.67) doped with more than 1×1017cm−3Al, In, Ga, Cl, Br or I for absorbing the blue light, producing 568 nm-580 nm yellow light (fluorescence) and synthesizing white color light by mixing the yellow light with the blue LED light.
REFERENCES:
patent: 6337536 (2002-01-01), Matsubara et al.
patent: 6724018 (2004-04-01), Ando et al.
patent: 2000-82845 (2000-03-01), None
patent: 2000-261034 (2000-09-01), None
Shuji Nakamura, Manual Of Photoactive Material.
Fish & Richardson P.C.
Jackson Jerome
Nguyen Joseph
Sumitomo Electric Industries Ltd.
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