Coating apparatus – Program – cyclic – or time control
Reexamination Certificate
1998-02-12
2001-08-07
Thibodeau, Paul (Department: 1773)
Coating apparatus
Program, cyclic, or time control
C118S697000, C118S698000, C118S715000, C118S719000
Reexamination Certificate
active
06270581
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a wet-oxidation apparatus which is a kind of semiconductor manufacturing apparatus, and to a wet-oxidation method.
2. Description of the Related Art
In a conventional wet-oxidation apparatus, a combustion-starting operation and a combustion-completing operation are conducted for every set of processing wafer which may be a single wafer or a small number of wafers. This is a cause of a lowering of throughput of the apparatus.
SUMMARY OF THE INVENTION
Thereupon, it is a main object of the present invention to provide a wet-oxidation apparatus and a wet-oxidation method which can suppress or prevent the throughput from being lowered and which can exhibit an excellent productivity.
According to a first aspect of the present invention, there is provided a wet-oxidation apparatus, comprising:
a reaction tube capable of accommodating a semiconductor wafer or semiconductor wafers;
a water vapor generating apparatus for generating water vapor;
a gas supply passage for supplying gas into the reaction tube;
a discharge passage; and
a gas switching unit capable of switching the water vapor from the water vapor generating apparatus into either one of the gas supply passage and the discharge passage.
According to a second aspect of the present invention, there is provided a wet-oxidation apparatus, comprising:
a reaction tube capable of accommodating a semiconductor wafer or semiconductor wafers;
a water vapor generating apparatus for generating water vapor;
an inert gas supply unit for supplying an inert gas;
a gas supply passage for supplying gas into the reaction tube;
a gas switching unit capable of switching between the water vapor from the water vapor generating unit and the inert gas from the inert gas supply unit so as to supply either one of the water vapor and the inert gas to the gas supply passage.
According to a third aspect of the present invention, there is provided a wet-oxidation apparatus, comprising:
a reaction tube capable of accommodating a semiconductor wafer or semiconductor wafers;
a water vapor generating apparatus for generating water vapor; and
a control unit controlling such that:
at least while wet-oxidation processing of the semiconductor wafer or wafers are conducted predetermined times in the reaction tube, the water vapor generating apparatus continuously generates water vapor;
whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is supplied to the gas supply passage; and
whenever the wet-oxidation processing is completed one time, a supply of the water vapor from the water vapor generating apparatus into the reaction tube is stopped.
According to a fourth aspect of the present invention, there is provided a wet-oxidation method, wherein
at least while wet-oxidation processing of a semiconductor wafer or semiconductor wafers are conducted predetermined times in a reaction tube, a water vapor generating apparatus continuously generates water vapor;
whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is supplied to the reaction tube to conduct the wet-oxidation processing of the semiconductor wafer or wafers; and
whenever the wet-oxidation processing is completed one time, the water vapor from the water vapor generating apparatus is switched toward a discharge passage.
According to a fifth aspect of the present invention, there is provided a wet-oxidation method, wherein
at least while wet-oxidation processing of a semiconductor wafer or semiconductor wafers are conducted predetermined times in a reaction tube, a water vapor generating apparatus continuously generates water vapor;
whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is supplied to the reaction tube to conduct the wet-oxidation processing of the semiconductor wafer or wafers; and
whenever the wet-oxidation processing is completed one time, the water vapor from the water vapor generating apparatus is switched to the inert gas from the inert gas supply unit so as to supply the inert gas to the reaction tube.
According to a sixth aspect of the present invention, there is provided a wet-oxidation method, wherein
at least while wet-oxidation processing of a semiconductor wafer or semiconductor wafers are conducted predetermined times in a reaction tube, a water vapor generating apparatus continuously generates water vapor;
whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is supplied to the reaction tube to conduct the wet-oxidation processing of the semiconductor wafer or wafers; and
whenever the wet-oxidation processing is completed one time, a supply of the water vapor from the water vapor generating apparatus into the reaction tube is stopped.
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patent: 5206033 (1993-08-01), None
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Ikeda Fumihide
Inokuchi Yasuhiro
Jackson Monique R
Kokusai Electric Co. Ltd.
Thibodeau Paul
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