Wet etching solution

Details Wet etching solution Wet etching solution

2007-08-20

2011-10-25

Tran, Binh X (Department: 1713)

Compositions

Etching or brightening compositions

C252S079200, C252S079300, C252S079400

Reexamination Certificate

active

08043525

ABSTRACT:
A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the nonionic surfactant including one or more of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water.

REFERENCES:
patent: 6140233 (2000-10-01), Kwag et al.
patent: 6399552 (2002-06-01), Lee et al.
patent: 2005/0118440 (2005-06-01), Mahon et al.
patent: 2006/0183297 (2006-08-01), Mun et al.
patent: 1168424 (2002-01-01), None
patent: 59219472 (1984-12-01), None
patent: 10-2000-0004840 (2000-01-01), None
Wikipedia, The Free Encyclopedia, “Ammonium Lauryl Sulfate”; http://en.wikipedia.org/wiki/Ammonium—lauryl—sulfate ; 3 pages; Sep. 2010.

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