Etching a substrate: processes – Nongaseous phase etching of substrate – Etching using radiation
Reexamination Certificate
2011-05-03
2011-05-03
Culbert, Roberts (Department: 1716)
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching using radiation
C438S746000
Reexamination Certificate
active
07935266
ABSTRACT:
A substrate supporting film to be etched is held on a rotating stage. Ultraviolet light having a wavelength of 200 nm or shorter radiated from first lamps irradiates the film in air, thereby removing an organic coatings from the film and making the surface of the film hydrophilic. A chemical solution is applied to the hydrophilic film while rotating the substrate. Ultraviolet light having a wavelength longer than 200 nm is radiated from second lamps and onto the film through the chemical solution.
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Nobuyuki Hishinuma, “Surface Treatment Technology Handbook (Jan. 2000)”, Excerpt from vol. 2 “Applications,” Chapter 1 Treatment Methods Excimer UV (with English Translation).
Hishinuma Nobuyuki
Kume Satoshi
Sugahara Hiroshi
Culbert Roberts
Leydig , Voit & Mayer, Ltd.
Renesas Electronics Corporation
Ushio Denki Kabushiki Kaisha
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