Wet etching method for silicon semiconductor wafer

Details Wet etching method for silicon semiconductor wafer Wet etching method for silicon semiconductor wafer

1998-02-06

2000-07-18

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

747748, 156345, H01L 21302, C23F 102

Patent

active

060907207

ABSTRACT:
Wet etching method and apparatus in which a wafer is processed so as to have a good flatness by making uniform a travel distance and a traveling velocity of an arbitrary point on a wafer surface relative to an etching solution, while rotating the wafer in the etching solution. An etching solution vessel comprises a pair of walls parallel to a plane of rotation of a wafer; and walls of curved surfaces, which intersect the pairs of walls at a right angle, and whose centers of curvature are the same, and which are spaced apart from each other along a radius of curvature with a distance of d therebetween; the etching solution is fed from a lower part of the vessel; and a flow velocity of the etching solution is adjusted at an arbitrary point between the pair of curved surfaces just before a stream of the solution contacts with a wafer rotating in the etching solution so that the flow velocity is a velocity (r.omega.), which is obtained by multiplying a distance r between the center of curvature and the arbitrary point with an angular velocity .omega. of the wafer or an approximation thereof.

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patent: 5904572 (1999-05-01), Lee et al.
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Patent Abstract of Japan, vol. 018, No. 336 (E-1568), Jun. 24, 1994.
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English language abstrat of JP 54-98181. Aug. 2, 1979.
English language abstract of JP 9-69510. Mar. 11, 1997.

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