Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...
Reexamination Certificate
2011-06-28
2011-06-28
Smith, Zandra (Department: 2822)
Cleaning compositions for solid surfaces, auxiliary compositions
Cleaning compositions or processes of preparing
For cleaning a specific substrate or removing a specific...
C510S372000, C510S461000, C257SE21224, C257SE21228
Reexamination Certificate
active
07968506
ABSTRACT:
After trench line pattern openings and via pattern openings are formed in a inter-metal dielectric insulation layer of a semiconductor wafer using trench-first dual damascene process, the wafer is wet cleaned in a single step wet clean process using a novel wet clean solvent composition. The wet clean solvent effectively cleans the dry etch residue from the plasma etching of the dual damascene openings, etches back the TiN hard mask layer along the dual damascene openings and forms a recessed surface at the conductor metal from layer below exposed at the bottom of the via openings of the dual damascene openings.
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Chou Chun-Li
Jang Syun-Ming
Shieh Jyu-Horng
Ting Chih-Yuan
Duane Morris LLP
Novacek Christy L
Smith Zandra
Taiwan Semiconductor Manufacturing Co. Ltd.
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