Wet cleaning process and method for fabricating...

Details Wet cleaning process and method for fabricating... Wet cleaning process and method for fabricating...

2007-02-27

2010-06-08

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S750000, C134S001300

Reexamination Certificate

active

07732346

ABSTRACT:
A wet cleaning process is provided. The wet cleaning process includes at least one first rinse process and a second rinse step. The first rinse step includes rinsing a substrate using deionized water containing CO2, and then draining the water containing CO2to expose the substrate in an atmosphere of CO2. The second rinse step includes rinsing the substrate using deionized water containing CO2.

REFERENCES:
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patent: 2003/0157806 (2003-08-01), Nagahara et al.
patent: 2005/0133066 (2005-06-01), Takahashi
patent: 2007/0068558 (2007-03-01), Papanu et al.
patent: 1851050 (2006-10-01), None
Chinese Examination Report of China Application No. 2007100863720, dated Jul. 24, 2009.

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