Wet clean for a surface having an exposed silicon/silica interfa

Details Wet clean for a surface having an exposed silicon/silica interfa Wet clean for a surface having an exposed silicon/silica interfa

1996-02-21

1997-07-08

Breneman, R. Bruce

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

216109, 134 13, 134 3, 1566361, 1566621, 252 794, B08B 304, C23G 100

Patent

active

056457375

ABSTRACT:
A surface having an exposed silicon/silica interface is cleaned by an HF dip, followed immediately by a rinse in citric acid, followed by a rinse in deionized water. Low pH of the citric acid significantly prevents the formation of a charge differential between the silica and silicon portions of the surface, which charge differential would otherwise cause any silica particles present to remain on the silicon portion of the surface. Surfactant properties of the citric acid help remove any silica particles from the surface. The deionized water rinse then removes the citric acid from the surfaces, leaving a very clean, low particulate surface on both the silica and silicon portions thereof, with little or no etching of the silicon portion.

REFERENCES:
patent: 5389194 (1995-02-01), Rostoker et al.
patent: 5478436 (1995-12-01), Winebarger et al.
patent: 5498293 (1996-03-01), Ilardi et al.

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