Compositions – Etching or brightening compositions – Inorganic acid containing
Patent
1995-12-06
1999-10-05
Breneman, Bruce
Compositions
Etching or brightening compositions
Inorganic acid containing
252 793, C09K 1300
Patent
active
059618779
ABSTRACT:
Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.
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B. Schwartz and H. Robbins, Chemical Etching of Silicon, J. Electrochem. Soc.: Solid State Science and Technology, Dec. 1997.
Grishin, A.N. et al. "Optimizing the chemical etchng regime for silicon in nitric acid-hydrofluoric acid-acetic acid solutions" Zavodskaya Laboratoriya. 42(3) p. 331, 1976.
Hunt Charles E.
Ling Li
Robinson McDonald
Westhoff Richard C.
Alanko Anita
Breneman Bruce
Moll Robert
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