Well resistor for ESD protection of CMOS circuits

Details Well resistor for ESD protection of CMOS circuits Well resistor for ESD protection of CMOS circuits

1995-08-16

1997-08-05

Gaffin, Jeffrey A.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific voltage responsive fault sensor

361 56, 361 58, 361111, 361118, H02H 320

Patent

active

056548605

ABSTRACT:
A circuit for providing electrostatic discharge (ESD) protection is disclosed. The circuit comprises a pair of CMOS field effect pull up and pull down transistors with reduced resistance source and drain, having a well resistor formed external to them between supply and ground busses respectively. During an ESD event, the well resistors serve to both limit the current flow through the transistors, and reduce the voltage drop across them.

REFERENCES:
patent: 4977537 (1990-12-01), Dias
patent: 5148056 (1992-09-01), Glass
patent: 5227327 (1993-07-01), Sasaki
patent: 5274276 (1993-12-01), Casper et al.
Josef Winnerl, "Silicides for High Density Memory and Logic Circuits," Semiconductor International, (4 pages) (Aug. 1994).

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