Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With non-planar semiconductor surface
Patent
1999-09-07
2000-09-05
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With non-planar semiconductor surface
257587, 257588, 438361, 438339, H01L 27082, H01L 27102, H01L 2970, H01L 3111
Patent
active
061147435
ABSTRACT:
The present invention relates to an integrated circuit including a lateral well isolation bipolar transistor. A first portion of the upper internal periphery of the insulating well is hollowed and filled with polysilicon having the same conductivity type as the transistor base, to form a base contacting region. A second portion of the upper internal periphery of the insulating well is hollowed and filled with polysilicon having the same conductivity type as the transistor emitter, to form an emitter contacting region.
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Galanthay Theordore E.
Hardy David
Morris James H.
SGS-Thomson Microelectronics S.A.
Wilson Allan R.
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