Well for CMOS imager and method of formation

Details Well for CMOS imager and method of formation Well for CMOS imager and method of formation

2005-04-14

2009-12-22

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S060000, C438S057000, C438S075000, C257S290000, C257S291000, C257S292000, C257S462000, C257SE27131, C257SE27132, C257SE27133

Reexamination Certificate

active

07635604

ABSTRACT:
A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.

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