Well for CMOS imager

Details Well for CMOS imager Well for CMOS imager

2009-03-11

2010-12-07

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S215000, C257S291000, C348S307000, C348S311000

Reexamination Certificate

active

07847366

ABSTRACT:
A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.

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