Well for CMOS imager

Details Well for CMOS imager Well for CMOS imager

2007-03-13

2007-03-13

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S291000

Reexamination Certificate

active

11025960

ABSTRACT:
A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.

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patent: 2004/0232456 (2004-11-01), Hong

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