Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2007-10-05
2011-10-25
Nguyen, Dao (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C257S003000, C257S012000, C257S021000, C257S022000, C257S028000, C257SE29082, C257SE29090, C257SE29168, C257SE29322, C257SE51040, C438S022000, C438S478000, C438S753000, C438S930000, C438S962000, C977S762000, C977S768000, C977S789000
Reexamination Certificate
active
08044379
ABSTRACT:
A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least in part from silicon nanowires are also described.
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Extended European Search date Jun. 14, 2011 issued EP 07 83 9257.
Buchanan & Ingersoll & Rooney PC
Hitachi Chemical Co. Ltd.
Hitachi Chemical Research Center Inc.
Nguyen Dao
LandOfFree
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