Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-03-01
2005-03-01
Le, Thong Q. (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185330
Reexamination Certificate
active
06862219
ABSTRACT:
A weak programming method of a non-volatile memory. A first voltage is applied to a substrate during a first duration, while a control-gate voltage, such as zero volt, is applied to the gate, such that the leakage of the bit line is reduced and electron-hole pairs are generated. In the second duration, a second voltage is applied to the substrate, and a third voltage is applied to the gate to enhance the capability of injecting electrons into the floating gate of the non-volatile memory. Therefore, the distribution of the threshold voltage is more concentrated. The second voltage has a polarity the same as that of the first voltage, while the polarity of the third voltage is opposite to that of the second voltage.
REFERENCES:
patent: 5295107 (1994-03-01), Okazawa et al.
patent: 20030206451 (2003-11-01), Tanaka et al.
Hsu James Juen
Huang Chi-Moon
Wu Chien-Min
Yang Shih-Hsien
Jiang Chyun IP Office
Le Thong Q.
Winbond Electronics Corp.
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