Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2011-06-07
2011-06-07
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C438S239000, C438S243000, C438S250000, C438S253000, C438S386000, C438S396000, C438S780000, C257SE21008, C257SE21396, C257SE21647, C257SE21007
Reexamination Certificate
active
07955945
ABSTRACT:
A process for making a dielectric material where a precursor polymer selected from poly(phenylene vinylene) polyacetylene, poly(p-phenylene), poly(thienylene vinylene), poly(1,4-naphthylene vinylene), and poly(p-pyridine vinylene) is energized said by exposure by radiation or increase in temperature to a level sufficient to eliminate said leaving groups contained within the precursor polymer, thereby transforming the dielectric material into a conductive polymer. The leaving group in the precursor polymer can be a chloride, a bromide, an iodide, a fluoride, an ester, an xanthate, a nitrile, an amine, a nitro group, a carbonate, a dithiocarbamate, a sulfonium group, an oxonium group, an iodonium group, a pyridinium group, an ammonium group, a borate group, a borane group, a sulphinyl group, or a sulfonyl group.
REFERENCES:
patent: 2009/0110811 (2009-04-01), Ding et al.
Ajayaghosh, A., Das, S., and George, M.V., “S-Benzoyl O-Ethyl Xanthate as a New Photoinitiator: Photopolymerization and Laser Flash Photolysis Studies,” J. of Polymer Scie.
Johnson, R.S. Cicotte, K.N., Mahoney, P.J., Tuttle, B.A., and Dirk, S.M., “Thermally Induced Failure of Polymer Dielectrics,” Adv. Mater. 22, 1750-1753, 2010.
Bogart Gregory R.
Dirk Shawn M.
Johnson Ross S.
Wheeler David R.
Bieg Kevin W.
Estrada Michelle
Klauetter Elmer
Sandia Corporation
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