Wavelength tuning of multiple quantum well (MQW) heterostructure

Coherent light generators – Particular active media – Semiconductor

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372 20, H01S 319

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048398993

ABSTRACT:
The thermalization process is effectively slowed down by reducing the tunneling or communication probability between adjacent quantum wells of a MQW heterostructure laser to increase the number of allowable subbands in the wells and thereby correspondingly increase the range of wavelength tuning of such lasers. This increase of allowable subbands is accomplished by (A) either (1) spatially varying the elemental composition of the wells or barriers or both in order to spatially increase or decrease the energy band from well to well or (2) spatially varying the thickness of the wells or barriers or both in order to spatially increase or decrease the energy band from well to well, or (B) a combination of (1) and (2) of (A).

REFERENCES:
patent: 4589115 (1986-05-01), Burnham et al.
patent: 4730331 (1988-03-01), Burnham et al.
patent: 4745612 (1988-05-01), Hayakawa et al.
patent: 4787089 (1988-11-01), Kayakawa et al.
J. J. Colman et al., "Induced Phonon-Sideband Laser Operation of Large-Quantum-Well Al.sub.x Ga.sub.1-x As-GaAs Heterostructures (L.sub.z .about.200-500 .ANG.)", Applied Physics Letters, vol. 37(1), pp. 15-17, Jul. 1, 1980.

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