Wavelength tunable semiconductor laser device

Details Wavelength tunable semiconductor laser device Wavelength tunable semiconductor laser device

1995-05-26

1996-10-22

Hellner, Mark

Optical: systems and elements

Optical amplifier

Particular active medium

372 46, H01S 319

Patent

active

055683118

ABSTRACT:
A wavelength tunable semiconductor laser device includes a semiconductor active layer located opposite a first conductivity type semiconductor substrate and producing light in response to current injected into the active layer; a semiconductor tuning layer located opposite the semiconductor substrate, having a refractive index that varies in response to an electric field applied to the tuning layer, and tuning the oscillation wavelength of the laser; a second conductivity type semiconductor spacer layer interposed between the active layer and the tuning layer; front and rear resonator facets located at opposite ends of the semiconductor active layer and the semiconductor tuning layer and having different reflectivities from each other; a first electrode supplying an electric field to the semiconductor tuning layer and divided into a plurality of portions in a resonator length direction of the laser; a second electrode for injecting current into the semiconductor active layer; and a third second electrodes and electrically connected to the semiconductor spacer layer.

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Wolf et al, "Tunable Twin-Guide Lasers with Flat Frequency Modulation Response by Quantum Stark Effect", Applied Physics Letters, vol. 60, No. 20, pp. 2472-2474.
Yamamoto et al., "Wavelength Tuning Characteristics of DFB Lasers Having Twin-Guide Structures Modulated by Injection Current or Electric Field", IEE Proceedings-J, vol. 139, 1992, pp. 24-28.
Staring et al., "Wavelength-Independent Output Power From an Injection-Tunable DBR Laser", IEEE Photonics Technology Letters, vol. 6, No. 2, 1994, pp. 147-149.
Sakano et al., "Wavelength-Tunable Three-Electrode DBR Laser with a Thin-Active Layer in Tuning Regions", IEEE Photonics Technology Letters, vol. 3, No. 10, 1991, pp. 866-868.
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