Wavelength-tunable semiconductor laser and fabrication process t

Details Wavelength-tunable semiconductor laser and fabrication process t Wavelength-tunable semiconductor laser and fabrication process t

1996-04-10

1998-08-04

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 35, 438 39, H01L 2100

Patent

active

057892741

ABSTRACT:
A wavelength tunable semiconductor laser includes an active region including an active layer generating an optical gain by injection of a current, a phase control region including a tuning layer generating variation of a refraction index by injection of the current, and a distributed Bragg reflector region including a tuning layer generating variation of a refraction index by injection of the current. The active region, the phase control region and the distributed Bragg reflector region are arranged in alignment in a resonance direction. A diffraction grating is provided in the vicinity of the tuning layer of the distributed Bragg reflector region. The wavelength tunable semiconductor laser includes a device for uniformly injecting a current to the phase control region and the distributed Bragg reflector region. The optical confinement factor to the tuning layer of the phase control region is greater than an optical confinement factor to the tuning layer of the distributed Bragg reflector type.

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