Wavelength-tunable semiconductor laser

Details Wavelength-tunable semiconductor laser Wavelength-tunable semiconductor laser

1993-03-31

1994-09-13

Davie, James W.

Coherent light generators

Particular beam control device

Tuning

372 34, 372 46, 372 50, 372 96, H01S 310

Patent

active

053475267

ABSTRACT:
A wavelength-tunable semiconductor laser which comprises a semiconductor substrate having first and second major surfaces, a distribution-feedback resonator having an active layer and a cladding layer, formed on the first major surface of the substrate and shaped like a stripe, and a first section and a second section aligned along the length of the resonator, and electrodes formed on the first and second sections of the resonator, respectively, for controlling current densities in the first and second section independently. The laser is characterized in that temperature changes more in the first section than in the second section, due to changes in densities of currents injected into the first and second sections.

REFERENCES:
patent: 5187717 (1993-02-01), Horita et al.
Appl. Phys. Lett., vol. 57, No. 25, pp. 2632-2634, "Broad Wavelength Tunability in Gain-Levered Quantum Well Semiconductor Lasers" K. Y. Lau, Dec. 17, 1991.

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