Coherent light generators – Particular beam control device – Tuning
Patent
1991-11-21
1993-12-28
Davie, James W.
Coherent light generators
Particular beam control device
Tuning
372 46, 372 50, 372 96, H01S 310, H01S 319
Patent
active
052746496
ABSTRACT:
An electronically wavelength-tunable distributed-feedback quantum well semiconductor laser includes a semiconductor substrate, an optical waveguide layer on the substrate, and a multiple quantum well structure section arranged on the optical waveguide layer and including first and second semiconductor layers which are alternately laminated on each other. The multiple quantum well structure section change regionally in the lamination number of the first and second layers, thereby defining a series of active regions with different gain versus carrier characteristics. A plurality of electrodes are formed on the upper portion of the multiple quantum well structure section positionally in association with the series of the activated regions.
REFERENCES:
patent: 5177758 (1993-01-01), Oka et al.
Applied Physics Letters, vol. 57, No. 20, Nov. 12, 1990, pp. 2068-2070, K. Y. Lau, "Frequency Modulation and Linewidth of Gain-Levered Two-Section Single Quantum Well Lasers".
Proceedings of the Conference on Lasers and Electrooptics (CLEO), May 1990, pp. 667-668, M. C. Wu, et al., "Gain-Levering Enhanced Continuous Wavelength Tuning (6.1 NM) in Two-Section Strained Multi-Quantum Well DFB Lasers".
Patent Abstracts of Japan, vol. 13, No. 103 (E-725), Mar. 10, 1989, & JP-A-63-276289, Nov. 14, 1988, T. Matsui, et al., "Semiconductor Laser and Using Method Thereof".
Journal of Lightwave Technology, vol. LT-5, No. 4, Apr. 1987, pp. 516-522, Y. Yoshikuni, et al., "Multielectrode Distributed Feedback Laser for Pure Frequency Modulation and Chirping Suppressed Amplitude Modulation".
"Broad Wavelength Tunability in Gain-Levered Quantum Well Semiconductor Lasers", Appl. Phys. Lett. 57(25), Dec. 17, 1990, pp. 2632-2634.
Hirayama Yuzo
Onomura Masaaki
Davie James W.
Kabushiki Kaisha Toshiba
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