Wavelength-tunable distributed Bragg reflector semiconductor las

Details Wavelength-tunable distributed Bragg reflector semiconductor las Wavelength-tunable distributed Bragg reflector semiconductor las

1991-06-26

1992-10-20

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 20, 372 26, 372 96, H01S 319

Patent

active

051576813

ABSTRACT:
A wavelength-tunable distributed Bragg reflector semiconductor laser including serially disposed active, phase control, and wavelength tuning sections includes a first conductivity type semiconductor substrate; a first conductivity type semiconductor light guide layer disposed on said substrate at least in the phase control and wavelength tuning sections of the laser including at least one quantum well layer sandwiched between quantum barrier layers; a first conductivity type semiconductor barrier layer and a semiconductor active layer serially disposed on the light guide layer in the active section of the laser; a second conductivity type semiconductor cladding layer disposed on the light guide layer at least in the phase control and wavelength tuning sections of the laser, the light guide layer including a Bragg reflector in the wavelength tuning section of the laser; a first electrode disposed on the substrate; and second, third, and fourth electrodes disposed on the cladding layer in the active, phase control, and wavelength tuning sections of the laser, respectively.

REFERENCES:
patent: 4719636 (1988-01-01), Yamaguchi
patent: 4856005 (1989-08-01), Oe et al.
patent: 4920542 (1990-04-01), Brosson et al.
patent: 4995048 (1991-02-01), Kuindersma et al.
patent: 5088097 (1992-02-01), Ono et al.
Woodward et al., "The Side-Mode Suppression Ratio of a Tunable DBR Laser", IEEE Photonics Technology Letters, vol. 2, No. 12, Dec. 1990, pp. 854-856.

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