Coherent light generators – Particular active media – Semiconductor
Patent
1996-05-28
1997-07-22
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 32, 372 46, 372 94, 372 96, 372 99, 372102, 372 18, H01S 319, H01S 313, H01S 308
Patent
active
056510187
ABSTRACT:
A wavelength-stabilized, semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the Wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity. The flared gain region and waveguide may be differentially pumped or modulated with current provided by separate contacts.
REFERENCES:
patent: 4251780 (1981-02-01), Scifres et al.
patent: 4349905 (1982-09-01), Ackley
patent: 4369513 (1983-01-01), Umeda et al.
patent: 4446557 (1984-05-01), Figueroa
patent: 4689797 (1987-08-01), Olshansky
patent: 4783788 (1988-11-01), Gordon
patent: 4791648 (1988-12-01), Vojak et al.
patent: 4791649 (1988-12-01), Yamamoto et al.
patent: 4794346 (1988-12-01), Miller
patent: 4796273 (1989-01-01), Yamaguchi
patent: 4797894 (1989-01-01), Yaeli
patent: 4802187 (1989-01-01), Bouley et al.
patent: 4803696 (1989-02-01), Pepper et al.
patent: 4815084 (1989-03-01), Scifres et al.
patent: 4860296 (1989-08-01), Chemla et al.
patent: 4914665 (1990-04-01), Sorin
patent: 4942585 (1990-07-01), Ungar
patent: 5003550 (1991-03-01), Welch et al.
patent: 5140599 (1992-08-01), Trutna, Jr. et al.
patent: 5175643 (1992-12-01), Andrews
patent: 5184247 (1993-02-01), Schimpe
patent: 5200969 (1993-04-01), Paoli
patent: 5202285 (1993-04-01), Sugano et al.
patent: 5260822 (1993-11-01), Missaggia et al.
patent: 5262644 (1993-11-01), Maguire
patent: 5349602 (1994-09-01), Mehuys et al.
patent: 5537432 (1996-07-01), Mehuys et al.
Ludeke et al, "Singel Mode GaAs Laser In External Cavity", IBM Technical Disclosure Bulletin, vol. 15, No. 2 Jul. 1972.
Sorin et al., "Single-frequency output from a broadband-tunable external fiber-cavity laser," Optics Letters, vol. 13, No. 9, Sep. 1988.
Zorabedian et al., "Interference-filter-tuned, alignment-stabilized, semiconductor external-cavity laser," Optics Letters, vol. 13, No. 10, pp. 826-828, Oct. 1988.
Goldberg et al., "Single lobe operation of a 40-element laser array in an external ring laser cavity", Applied Physics Letters, vol. 51, pp. 871-873, 21 Sep. 1987.
Surette et al., "High-Power Ring Laser Using a Broad-Area GaAlAs Amplifier", IEEE Photonics Technology Letters, vol. 5, pp. 919-922, Aug. 1993.
Bernacki et al., "Alignment-insensitive technique for wideband tuning of an unmodified semiconductor laser," Optics Letters vol. 13, No. 9, pp. 725-727, Sep. 1988.
Fujita et al., "Polarization bistability in external cavity semiconductor lasers," Appl. Phys. Lett., 51(6), pp. 392-394, Aug. 10, 1987.
Helms et al., "Stable Operation Range for Laser Diodes with an Integrated Passive Cavity in the Presence of External Optical Feedback," IEEE Photonics Technology Letters, vol. 1, No. 12, pp. 409-411, Dec. 1989.
Hori et al., "External-Cavity Semiconductor Laser with Focusing Grating Mirror," IEEE Journal of Quantum Electronics, vol. 26, No. 10, pp. 1747-1755, Oct. 1990.
Mittelstein et al., "Broadband tunability of gain-flattened quantum well semiconductor lasers with an external grating," Appl. Phys. Lett., 54(12), 1092-1094, Mar.20, 1989.
Notomi et al., "Broad-Band Tunable Two-Section Laser Diode with External Grating Feedback," IEEE Photonics Technology Letters, vol. 2, No. 2, pp. 85-87, Feb. 1990.
Schremer et al., "Single-frequency tunable external-cavity semiconductor laser using an electro-optic birefringent modulator," Appl. Phys. Lett., 55(1), pp. 19-21, Jul. 3, 1989.
Schremer et al., "External-Cavity Semiconductor Laser with 1000 GHz Continuous Piezoelectric Tuning Range," IEEE Photonics Technology Letters, vol. 2, No. 1, pp. 3-5, Jan. 1990.
Sharfin et al., "Lateral-Mode Selectivity in External-Cavity Diode Lasers with Residual Facet Reflectivity," IEEE Journal of Quantum Electronics, vol. 26, No. 10, pp. 1756-1763, Oct. 1990.
Lang Robert J.
Mehuys David G.
Scifres Donald R.
Welch David F.
Bovernick Rodney B.
Carothers, Jr. W. Douglas
Sanghavi Hemang
SDL Inc.
LandOfFree
Wavelength-stabilized, high power semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Wavelength-stabilized, high power semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wavelength-stabilized, high power semiconductor laser will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1564933