Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2004-12-07
2008-10-28
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S025000, C257S027000, C257S030000, C257SE33008, C257SE33053, C257SE33063, C257S184000, C257S459000
Reexamination Certificate
active
07442953
ABSTRACT:
A device comprising a number of different wavelength-selective active-layers arranged in a vertical stack, having band-alignment and work-function engineered lateral contacts to said active-layers, consisting of a contact-insulator and a conductor-insulator. Photons of different energies are selectively absorbed in or emitted by the active-layers. Contact means are arranged separately on the lateral sides of the vertical stack for injecting charge carriers into the photon-emitting layers and extracting charge carriers generated in the photon-absorbing layers. The device can be used for various applications for light emission or light absorption. The stack of active layers may also include top and bottom electrodes whereby the device can also be operated as a FET device.
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Jackson, Jr. Jerome
Lipsitz & McAllister LLC
Quantum Semiconductor LLC
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