Wavelength-selective photo detector

Details Wavelength-selective photo detector Wavelength-selective photo detector

2005-04-26

2005-04-26

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S438000, C257S458000, C257S080000, C257S199000, C257S444000

Reexamination Certificate

active

06885040

ABSTRACT:
A wavelength-selective photo detector device includes a transparent upper electrode including a capacitor, a first semiconductor layer disposed under the upper electrode, an optical absorption layer disposed under the first semiconductor layer for absorbing light to form pairs of electrons and holes, an amplification layer disposed under the optical absorption layer for generating secondary electrons, a second semiconductor layer disposed under the amplification layer, and a lower electrode disposed under the second semiconductor layer and including an inductance coupled in parallel with an external resistance. The photo detector improves the S/N ratio and filters only light having a particular wavelength band.

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