Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-05-28
1994-11-22
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 24, 257187, 257192, H01L 2714, H01L 3100
Patent
active
053671775
ABSTRACT:
An optical device which uses a heterojunction field effect detector (HFED) having wavelength selectivity through the use of ion-implantation, and a wavelength selective grating. The device incorporates a Grinsch layer structure with a single GaAs quantum well. The optical power from the lens couples into a guided mode. The absorbing region is the quantum well itself. In the operation of the HFED, a positive bias is applied to the gate, and the depleted GaAs quantum well below the gate absorbs the photons, generating electron-hole pairs. The photocarriers are separated by the electric field before recombination can occur. The photocurrent is then produced in the external circuit by appropriately biasing the device. For collecting the electrons, a positive bias is applied to both the source and drain contacts, which act as dual drain contacts. The holes are removed via the collector which is maintained at ground. To maximize the responsivity (i.e., output photocurrent for input optical power) the edge-coupling technique for coupling the light from an optical fiber into the device is used. Wavelength selectivity is attained through the use of an ion implanted grating to decrease the required length of the device thereby increasing the speed of the device.
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Sargood Steve
Taylor Geoffrey W.
Crane Sara W.
Garfinkle Irwin P.
Singer Donald J.
The United States of America as represented by the Secretary of
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