Wavelength-resonant surface-emitting semiconductor laser

Details Wavelength-resonant surface-emitting semiconductor laser Wavelength-resonant surface-emitting semiconductor laser

1988-04-22

1989-11-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

330 43, 372 46, 372 50, H01S 319

Patent

active

048812366

ABSTRACT:
A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

REFERENCES:
patent: 4675876 (1987-06-01), Svilans
Appl. Phys. Lett. 51(21), Nov. 23, 1987, "Surface-Emitting Laser Diode (etc.)", by Ogura et al, pp. 1655-1657.
Appl. Phys. Lett 50(18), May 4, 1987, "Visible Room-Temperature, Surface-Emitting Laser, (etc.)", by Gourley et al pp. 1225-1227.

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