Wavelength-insensitive radiation coupling for multi-quantum...

Details Wavelength-insensitive radiation coupling for multi-quantum... Wavelength-insensitive radiation coupling for multi-quantum...

2006-10-31

2006-10-31

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S009000, C438S039000, C438S057000, C438S066000

Reexamination Certificate

active

07129104

ABSTRACT:
Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towards the quantum-well layers.

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patent: 5485015 (1996-01-01), Choi
Song et al , “Magnetically confined plasma reactive ion etching of GaAs/AlGaAs/AlAs quantum nanostructures”, J. Vac. Sci. Technol. B, vol. 12, No. 6, 1994, pp. 3388-3392.

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