Wavelength extension for backthinned silicon image arrays

Details Wavelength extension for backthinned silicon image arrays Wavelength extension for backthinned silicon image arrays

2005-09-13

2005-09-13

Wille, Douglas A. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S228000, C438S075000

Reexamination Certificate

active

06943425

ABSTRACT:
There is described a back thinned sensor in which a material is added on the front surface to extend the wavelength of the sensor into wavelengths it normally does not reach. In the preferred embodiment, the back-thinned layer comprises silicon and is the base for a CMOS device or a CCD. The photocathode in a night vision device comprises in the preferred unit GaAs.

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