Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-05-08
2007-05-08
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257S094000, C257S415000
Reexamination Certificate
active
11301665
ABSTRACT:
The present invention provides a wavelength-convertible LED which has first and second surfaces, including first and second conductivity-type cladding layers and an active layer formed between the first and second conductivity-type cladding layers to emit a specific wavelength light. The invention also includes at least a piezoelectric layer on at least one of the first and second surfaces of the semiconductor LED with its thickness variable according to the applied voltage, and a rigid frame made of substantially non-resilient rigid material surrounding the semiconductor LED and the at least one piezoelectric layer such that the increase of the thickness of the piezoelectric layer is applied to the semiconductor LED as pressure. The invention further includes a plurality of terminals on the rigid frame, connected to the first and second conductivity-type cladding layers, and the piezoelectric layer.
REFERENCES:
patent: 4991150 (1991-02-01), Wixom
patent: 5446334 (1995-08-01), Gaffney
Crane Sara
Samsung Electro-Mechanics Co. Ltd.
Volpe and Koenig P.C.
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