Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-02-15
2005-02-15
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S099000
Reexamination Certificate
active
06855958
ABSTRACT:
Wavelength conversion element for car use constituted in the following manner can provide practical LED components for headlights and fog lamps. The element comprises a heat conductive base having a cavity; one or more chips fitted to the cavity bottom, and a wavelength conversion part, which converts emitted light from the chip to visible rays, arranged above the chip. The chip comprises a substrate and a light emitting part constituted by an n-type GaN film, an active layer and a p-type GaN film successively laminated on the substrate. The chip has one straight side in its plan view; an angle formed between the bottom and the side cavity surface is over 0 degree and below 90 degree. The cavity has one straight side in its opening. A ratio of the cavity opening to the totaled areas in plan view of the respective chips, is set less than three.
REFERENCES:
patent: 20040076016 (2004-04-01), Sato et al.
Sato Hiroyuki
Yatsuda Yasushi
Carella Byrne Bain Gilfillan Cecchi et al
Olstein Elliot M.
Prenty Mark V.
Squire William
Stanley Electric Co. Ltd.
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