Waveguide-type variable-sensitivity semiconductor photodetector

Details Waveguide-type variable-sensitivity semiconductor photodetector Waveguide-type variable-sensitivity semiconductor photodetector

1998-08-14

2000-09-05

Le, Que T.

Optics: measuring and testing

Photometers

Pupillary

250216, 257184, 385 12, H01L 3100

Patent

active

061151165

ABSTRACT:
A waveguide-type variable-sensitivity semiconductor photodetector has a waveguide photodetector area and an optical attenuation area formed on an n-InP substrate. The optical attenuation area includes a GaInAs optical waveguide layer having a bandgap energy of 0.85 eV, a pair of upper and lower cladding layers each having a bandgap energy of 1.35 eV and an intermediate layer disposed at the heterojunction interface between the optical waveguide layer and the upper cladding layer and having a bandgap energy of 1.0 eV. A pile-up of halls at the heterojunction interface is prevented by the intermediate layer to improve the linearity of the output optical signal to the input optical signal.

REFERENCES:
patent: 5973339 (1999-10-01), Yokouchi et al.
D.Meglio et al.; Analysis and Optimization of InGaAsP Electro-Absorption Modulators; IEEEJ and Quantum-Electron 31 pp. 261-268, 1995 (Month Unknown).

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