Waveguide type semiconductor photodetector

Optical waveguides – Integrated optical circuit

Patent

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Details

385131, 257188, 257441, G02B 610

Patent

active

059914734

ABSTRACT:
A waveguide type semiconductor photodetector comprises a n-InP substrate, and a laminate including a first and second optical confinement layers and an undoped optical absorption layer interposed therebetween. The optical absorption layer has a thickness between 0.2 and 0.5 .mu.m, and a bandgap wavelength smaller than the bandgap wavelength of the first and second optical confinement layers. The photodetector has a large mode field diameter and a small coupling loss between the same and a glass fiber.

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