Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1997-08-01
1999-06-08
Brown, Peter Toby
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438 32, 438 40, 438 41, 438681, 438942, H01L 2100
Patent
active
059100125
ABSTRACT:
A waveguide type semiconductor photodetecting device has a semiconductor substrate, a photodetecting element, and a waveguide optically coupled with the photodetecting element which can avoid occurrence of light loss in the tapered waveguide even when a width of a light inciding side of the tapered waveguide is widened. The waveguide has a waveguide layer gradually narrowing a width and gradually increasing a layer thickness and a refraction index from light incident side to the photodetecting element. The waveguide is integrated with the photodetecting element on the semiconductor substrate.
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K. Kato et al., "Design of Ultrawide-Band, High-Sensitivity p-i-n Protodetectors", IEICE Trans. Electron., vol. E76-C, No. 2, Feb. 1993, pp. 214-221.
Brown Peter Toby
NEC Corporation
Pham Long
LandOfFree
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