Waveguide PIN photodiode having graded index distribution...

Optical waveguides – Planar optical waveguide – Thin film optical waveguide

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C385S039000, C385S043000, C398S214000

Reexamination Certificate

active

11481580

ABSTRACT:
A waveguide PIN photodiode is provided. The waveguide PIN photodiode includes a lower light guide layer, a light absorption layer, an upper light guide layer, and a cladding layer. The lower light guide is formed on a substrate, and the light absorption layer is formed on the lower light guide layer. The upper light guide layer is formed on the light absorption layer, and the cladding layer is formed on the upper light guide layer. The lower light guide layer, the light absorption layer, and the upper light guide layer constitute a core layer, which is an optical waveguide, and graded index distribution is symmetrically formed in a depth direction, centering around the light absorption layer having a highest refractive index.

REFERENCES:
patent: 3821777 (1974-06-01), James
patent: 4258375 (1981-03-01), Hsieh et al.
patent: 4750183 (1988-06-01), Takahashi et al.
patent: 4999844 (1991-03-01), Imamoto
patent: 5289484 (1994-02-01), Hayakawa
patent: 5298762 (1994-03-01), Ou
patent: 5479427 (1995-12-01), Yoshida et al.
patent: 5998851 (1999-12-01), Nishikata
patent: 6472691 (2002-10-01), Mukaihara et al.
patent: 6646317 (2003-11-01), Takeuchi
patent: 6734519 (2004-05-01), Nakaji et al.
patent: 2004/0135136 (2004-07-01), Takahashi et al.
patent: 2006/0165349 (2006-07-01), Demiguel et al.
patent: 2006/0198404 (2006-09-01), Henrichs
‘Design, Optimization, and Fabrication of Side-Illuminated p-i-n Photodetectors With High Responsivity and High Alignment Tolerance for 1.3- and 1.55-μm Wavelength Use’ Magnin et al., Journal of Lightwave Technology, vol. 20, No. 3, Mar. 2002, pp. 477-488.
‘Very High-Responsivity Evanescently Coupled Photodiodes Integrating a Short Planar Multimode Waveguide for High-Speed Applications’ Demiguel et al., IEEE Photonics Technology Letters, vol. 15, No. 12, Dec. 2003, pp. 1761-1763.
‘Design and Fabrication of a Waveguide Photodiode for 1.55-μm-Band Access Receivers’ Takeuchi et al., Jpn. J. Appl. Phys. vol. 38 (1999) pp. 1211-1214, Part 1, No. 2B, Feb. 1999.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Waveguide PIN photodiode having graded index distribution... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Waveguide PIN photodiode having graded index distribution..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Waveguide PIN photodiode having graded index distribution... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3855556

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.