Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1985-12-10
1987-06-09
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330277, 330289, 330295, 330297, H03F 360, H03F 368
Patent
active
046723285
ABSTRACT:
A metal partition wall is placed inside a waveguide without ridge or the like and has an aperture in which a GaAs-FET is located, so that the input and output are coupled only through this GaAs-FET. The input and output terminals of the GaAs-FET are coupled through L-shaped coupling to the waveguide. An amplifier thus constructed has a high gain and is best adapted for power, while because the metal partition wall also serves as a heat sink.
REFERENCES:
patent: 4124823 (1978-11-01), Sechi
Bowers, "Impatt-Diode Multistage Transmission Amplifiers", IEEE Transactions on Microwave Theory and Techiques, vol. MTT-18, No. 11, Nov. 1970, pp. 943-951.
Pedinoff, "The Negative-Conductance Slot Amplifier," Ire Transactions on Microwave Theory and Techniques, Nov. 1961, pp. 557-566.
Tohyama et al., "23-GHz Band GaAs MESFET, Reflection-Type Amplifier", IEEE Transactions on Microwave Theory and Techniques, vol.-27, No. 5, May 1979, pp. 408-411.
MTT Symposium Sponsored by IEEE Held in 1978, C. F. Krumm proposed in his article on "A 30-GH.sub.z GaAs FET Amplifier" (pp. 383-385, Digest of Technical Papers).
The Institute of Electronics and Communication Engineers of Japan 3-242.
Adachi Masahiko
Ikeda Hiroaki
Ono Isao
Mullins James B.
Nippon Hoso Kyokai
Nippon Wave Guide Co., Ltd.
LandOfFree
Waveguide-mounted amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Waveguide-mounted amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Waveguide-mounted amplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1831426