Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-02-08
2005-02-08
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C385S014000, C385S088000, C385S089000, C385S092000, C385S132000
Reexamination Certificate
active
06852556
ABSTRACT:
An optoelectronic device and a method of making same. The optoelectronic device comprises a substrate, at least one dielectric waveguide in the substrate, and at least one active semiconductor layer physically bonded to the substrate and optically coupled to the at least one dielectric waveguide in the substrate, the at least one active semiconductor layer being able to generate light, detect light, amplify light or otherwise modulate amplitude or phase of light.
REFERENCES:
patent: 5625729 (1997-04-01), Brown
patent: 6027254 (2000-02-01), Yamada et al.
patent: 9966613 (1999-12-01), None
patent: 0129992 (2001-04-01), None
Chan. W.K., et al., “Grafted Semiconductor Optoelectronics,”IEEE Journal Of Quantum Electronics, vol. 27, No. 3, pp. 717-725 (Mar. 1991).
Yi-Yan, A., et al., “Semiconductor-Film Grafting: A New Approach to OEICs,”Circuits&Devices, pp. 26-30 (May 1992).
Alexe, M., et al., “Low Temperature GaAs/Si Direct Wafer Bonding,”Electronics Letters, vol. 36, No. 7 (Mar. 30, 2000).
Chu, S.T., et al., “Wavelength Trimming of a Microring Resonator Filter by Means of a UV Sensitive Polymer Overlay,”IEEE Photonics Technology Letters, vol. 11, No. 6, pp 688-690 (Jun. 1999).
Corbett, B., et al., “Low-Threshold Lasing in Novel Microdisk Geometries,”IEEE Photonics Technology Letters, vol. 8, No. 7, pp 855-857 (Jul. 1996).
Corbett, B., “Spectral Characteristics of Low Threshold Microdisks,”IEEE Lasers and Electro-Optics Society 1996 Annual Meeting, vol. 2, pp 197-198 (1996).
Hansen, D.M., et al., “Development of a Glass-Bonded Compliant Substrate”,Journal of Crystal Growth, vol. 195, pp. 144-150 (1998).
Kato, D., et al., “PLC Hybrid Integration Technology and Its Application to Photonic Components”,IEEE Journal of Selected Topics in Quantum Electronics, vol. 6, No. 1, pp. 4-13 (2000).
Little, B.E., et al., “Ultra-Compact Si-SiO2Microring Resonator Optical Channel Dropping Filters,”IEEE Photonics Technology Letters, vol. 10, No. 4, pp 549-551 (Apr. 1998).
Little, B.E., et al., “Wavelength Switching and Routing Using Absorption and Resonance”,IEEE Photonics Technology Letters, vol. 10, No. 6, pp 816-818 (Jun. 1998).
London, Joanna M., et al., “Preparation of Silicon-on-Gallium Arsenide Wafers for Monolithic Optoelectronic Integration”,IEEE Photonics Technology Letters, vol. 11, No. 8, pp. 958-960 (1999).
MacDonald, R.I., et al., “Hybrid Optoelectronic Integrated Circuit,”Applied Optics, vol. 26, No. 5, pp 842-844 (Mar. 1, 1987).
Narayanan, A., et al., “High-Efficiency Waveguide-Coupled λ=1.3 μm InχGa1−χAs/GaAs MSM Detector Exhibiting Large Extinction Ratios at L and X Band”,IEEE Photonics Technology Letters, vol. 5, No. 5, pp. 514-517 (1993).
Sakamoto, S.R., et al., “Substrate Removed GAAs-AlGaAs Electrooptic Modulators”,IEEE Phontonics Technology Letters, vol. 11, No. 10, pp. 1244-1246 (1999).
Tishinin, D.V., et al., “Vertical Resonant Couplers with Precise Coupling Efficiency Control Fabricated by Wafer Bonding”,IEEE Photonics Technology Letters, vol. 11, No. 8, pp. 1003-1005 (1999).
Yanagisawa, M., et al., “Film-Level Hybrid Integration of AlGaAs Laser Diode with Glass Waveguide on Si Substrate,”IEEE Photonics Technology Letters, vol. 4, No. 1, pp 21-23 (Jan. 1992).
Yi-Yan, A., et al., “GaInAs/InP pin Photodetectors Integrated with Glass Waveguides,”Electronics Letters, vol. 27, No. 1, pp 87-89 (Jan. 3, 1991).
HRL Laboratories LLC
Ladas & Parry LLP
Tran Mai-Huong
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