Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1994-07-08
1996-11-12
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257588, 257592, H01L 21331, H01L 2970
Patent
active
055743056
ABSTRACT:
An embodiment of the present invention is a process for semiconductor device having a silicon substrate. The process comprises positioning at least one field implant mask and field implanting a silicon substrate around a bipolar active region in a substrate such that boron atoms are blocked out of an active region, and only the field region surrounding said active area is implanted, said implanting such that a predetermined layout area of a semiconductor device does not need to be increased to compensate for a BV.sub.bso problem.
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patent: 5289024 (1994-02-01), Ganschow
Lien Chuen-Der
Terrill Kyle W.
Brown Peter Toby
Integrated Device Technology Inc.
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