Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2005-11-22
2005-11-22
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S632000, C257S620000, C257S774000
Reexamination Certificate
active
06967389
ABSTRACT:
A semiconductor chip module and forming method is provided. The module includes a support member having at least one well being open to receive a semiconductor chip. Each well depth is substantially equal to the thickness of a chip. The support member has a planar region surrounding each well. A chip is in each well. A dielectric sheet of material is laminated over each chip and extends onto the planar area surrounding the wells and has a face oriented away from the chip. Electrical circuitry including capture pads is formed on the face of the dielectric sheet and extends onto the sheet that overlies the planar region. Conducting vias are formed in the dielectric sheet connecting the electrical circuitry on the dielectric sheet with the contact pads on the chip. A multilayer, circuitized laminate having a fan-out pattern is laminated to the dielectric sheet.
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IBM Technical Disclosure Bulletin entitled “Flatpack Package Using Core Metal Layer of Composite Substrate as Ground Plane”, Mar., 1991.
Infantolino William
Markovich Voya R.
Sathe Sanjeev B.
Thiel George H.
Hogg William N.
Thai Luan
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