Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-06-02
2009-10-20
Landau, Matthew C. (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21561
Reexamination Certificate
active
07605055
ABSTRACT:
A method of manufacturing a wafer using a support substrate of a crystalline material. On the surface of the support substrate, a layer of a diamond is grown to form a first wafer in combination with the support substrate. A further substrate is bonded to the surface of the diamond layer, and a region of weakness is formed within the first wafer or the further substrate. Energy is then applied at the region of weakness to detach the structure into a first portion and a second portion.
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Booker Vicki B
Landau Matthew C.
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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