Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2006-02-21
2006-02-21
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000, C438S481000, C438S933000
Reexamination Certificate
active
07001826
ABSTRACT:
A process for forming a useful layer (6) from a wafer (10), the wafer (10) comprising a supporting substrate (1) and a strained layer (2) that are chosen respectively from crystalline materials. The process includes a first step of forming a region of perturbation (3) in the supporting substrate (1) at a defined depth by creating structural perturbations that cause at least relative relaxation of the elastic strains in the strained layer (2). A second step of supplying energy causes at least relative relaxation of the elastic strains in the strained layer (2). A portion of the wafer (10) is removed from the opposite side from the relaxed strained layer (2′), the useful layer (6) being the remaining portion of the wafer (10). The present invention also relates to an application of the process and to wafers produced during the process.
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Akatsu Takeshi
Ghyselen Bruno
Perkins Pamela E
S.O.I.Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
Zarabian Amir
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