Wafer thinning using magnetic mirror plasma

Details Wafer thinning using magnetic mirror plasma Wafer thinning using magnetic mirror plasma

2006-10-10

2006-10-10

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S462000, C438S732000, C204S298370

Reexamination Certificate

active

07118992

ABSTRACT:
A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segregate, the wafer may be partially diced. Then, the wafer may be tape laminated. Next, the backside of the wafer may be etched. As the backside material is removed, the partial dicing and through-die vias may be exposed. As such, the method reduced handling steps and increases yield. Furthermore, the method may be used in association with wafer level processing and flip chip with bump manufacturing.

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patent: 4609428 (1986-09-01), Fujimura
patent: 5114529 (1992-05-01), Masuyama et al.
patent: 2004/0155592 (2004-08-01), Madocks

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