Wafer thickness control during backside grind

Details Wafer thickness control during backside grind Wafer thickness control during backside grind

2006-11-14

2006-11-14

Eley, Timothy V. (Department: 3724)

Abrading

Precision device or process - or with condition responsive...

By optical sensor

C451S005000, C451S008000

Reexamination Certificate

active

07134933

ABSTRACT:
A method and apparatus for controlling the thickness of a semiconductor wafer during a backside grinding process are disclosed. The present invention uses optical measurement of the wafer thickness during a backside grinding process to determine the endpoint of the grinding process. Preferred methods entail measuring light transmitted through or reflected by a semiconductor wafer as a function of angle of incidence or of wavelength. This information is then used, through the use of curve fitting techniques or formulas, to determine the thickness of the semiconductor wafer. Furthermore, the present invention may be used to determine if wedging of the semiconductor occurs and, if wedging does occur, to provide leveling information to the thinning apparatus such that a grinding surface can be adjusted to reduce or eliminate wedging.

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