Wafer temperature trajectory control method for high...

Details Wafer temperature trajectory control method for high... Wafer temperature trajectory control method for high...

2005-02-15

2005-02-15

Fuqua, Shawntina (Department: 3742)

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

C219S405000, C219S411000, C392S416000, C392S418000, C118S724000, C118S725000, C118S050100

Reexamination Certificate

active

06855916

ABSTRACT:
A method for thermally processing a substrate provides a target substrate temperature and generates a move profile of the substrate within a thermal processing system. An amount of heat is provided to the substrate, and one or more temperatures associated with one or more respective locations on the substrate are measured. A predicted temperature profile is further generated, wherein a predicted temperature of the substrate is based on the amount of heat provided and the one or more measured temperatures. The amount of heat provided to the substrate is further regulated, based on the predicted temperature profile, wherein the substrate is thermally processed generally according to the intended substrate temperature profile. The amount of heat provided to the substrate can be further regulated by controlling a position of the substrate within the thermal processing system.

REFERENCES:
patent: 5820366 (1998-10-01), Lee
patent: 5900177 (1999-05-01), Lecouras et al.
patent: 6183137 (2001-02-01), Kojima et al.
patent: 6375348 (2002-04-01), Hebb et al.
patent: 6461036 (2002-10-01), Shajii et al.
patent: 6610968 (2003-08-01), Shajii et al.

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