Wafer surface treatment methods and systems using electrocapilla

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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438693, 438747, 438748, 216 38, 216 88, 216 89, 156345, H01L 2100

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active

060109645

ABSTRACT:
A surface treatment method for use in integrated circuit fabrication includes providing a substrate assembly having a surface. A liquid is provided adjacent the surface resulting in an interface therebetween. An electrical potential difference is applied across the interface and the surface is treated as the electrical potential difference is applied across the interface. The liquid may be a planarization liquid when the treatment of the surface includes planarizing a substrate assembly or the liquid may be a coating material when the treatment of the surface includes applying a coating material on the surface.

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R. Rillaerts et al., "The Dynamic Contact Angle", Chem. Engineer. Sci., 35, 883-887 (1980).
J.M. Steigerwald et al., "Electrochemical Potential Measurements during the Chemical-Mechanical Polishing of Copper Thin Films", J. Electrochem. Soc., 142, 2379-2385 (1995).

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