Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1989-07-25
1992-06-09
Kunemund, Robert
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
118720, 118725, 148DIG6, H01L 21205
Patent
active
051195410
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to a wafer susceptor apparatus for mounting and heating a semiconductor wafer provided in a reaction chamber of a semiconductor manufacturing apparatus and the like
BACKGROUND OF THE INVENTION
There are known some devices for forming thin films of materials of various sorts on the basis of techniques such as those of CVD (Chemical Vapor Deposition), plasma CVD, optical CVD, and epitaxial growth, etc. In these devices a technique to mount and heat various wafers by making use of a heating system in which radio frequency (hereinafter referred to as RF) induction or optical excitation is employed. Such a technique is adapted to heat a supporter of the wafer by RF induction or optical excitation to thereby further heat the wafer supported by the supporter through heat conduction and thermal radiation. Since much gas is released from a heating supporter a prior susceptor has been structured in such a way that the heating supporter is coated with a dense coating film, through which any gas released by the heating supporter is unlikely to pass through the entire surface of the prior art supporter. Accordingly, any impurity gas which invades the heating supporter upon manufacture of that supporter is usually insufficiently removed therefrom even with degassing effected prior to film formation onto a wafer owning to the presence of the aforementioned dense coating film, and thereby causes the supporter to pollute a reaction chamber. Such a structure thus makes a clean process impracticable as the result of the above-described difficulty. Such a clean process is essential in putting future submicron patterns into practical use. This has been already described in detail in the specification of the application by the present inventor (Japanese Patent Application No. 60-211643. An Apparatus for Treating A Wafer). In what follows, the importance of such a clean process will be described, taking the case of epitaxial growth of silicon.
The progress and development of image sensing and LSI technologies are very rapid, and high sensitivity image sensors have been fabricated in the image sensing field together with DRAMs of 1M bits or more in the LSI field. In order to fabricate high performance electronic devices of this type, a high performance fabrication process is required as a matter of course, which process is thereupon not effected by indefinite factors and has excellent controllability.
A highly clean process for silicon epitaxial growth is an example of such a process. The highly clean process of this type is mainly needed to assure semiconductor devices in which the life times of minority carriers are long. In particular, such a highly clean process is effective for reducing various lattice defects involved on an epitaxial film.
The essential requirement to realize the highly clean epitaxial growth process for fabrication of high performance semiconductor devices is to remove almost all unnecessary gas components other than those required for attendant reaction from the atmosphere in a reaction chamber in which the process proceeds. That is, an ultracleaning process is essential to the realization of the highly clean epitaxial growth process indispensable to the manufacture of high sensitivity image sensors and ultrafine LSIs.
The epitaxial growth of silicon is, as expressed by for example: hydrogen reducing reaction of dichlorosilane (SiH.sub.2 Cl.sub.2) (formula (2)).
However if the reaction atmosphere includes water (H.sub.2 O), nitrogen (N.sub.2), oxygen (O.sub.2), carbon monoxide (CO), carbon dioxide (CO.sub.2), chlorine (Cl), hydrogen chloride (HCl), hydrocarbon (C.sub.3 H.sub.3, etc.), and heavy metals (Au, etc.), then nitrogen, oxygen, carbon, chlorine, heavy metals (Au, etc.) and the like will invade into an epitaxial film to form an electrically deep level. In order to prevent this deep level from being formed, it is necessary to highly clean the reaction atmosphere.
The reaction atmosphere thus made extremely clean can prevent unnecessary impurities fro
REFERENCES:
patent: 3783822 (1974-01-01), Wollam
patent: 3980854 (1976-09-01), Berkman et al.
patent: 4798926 (1989-01-01), Sakai
patent: 4858558 (1989-08-01), Ohmura et al.
Ohmi Tadahiro
Umeda Masaru
Horton Ken
Kunemund Robert
Ohmi Tadahiro
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