Wafer structure with discrete gettering material

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With desiccant – getter – or gas filling

Reexamination Certificate

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C257S731000, C438S058000, C438S143000, C438S476000

Reexamination Certificate

active

07808091

ABSTRACT:
The specification teaches a system for manufacturing microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In an embodiment, a system for manufacturing the devices includes efficiently integrating a getter material in multiple microdevices.

REFERENCES:
patent: 3214381 (1965-10-01), Baldauf
patent: 4426769 (1984-01-01), Grabbe
patent: 4630095 (1986-12-01), Otsuka et al.
patent: 4907974 (1990-03-01), Gotoh et al.
patent: 5032461 (1991-07-01), Shaw et al.
patent: 5083466 (1992-01-01), Holm-Kennedy et al.
patent: 5108026 (1992-04-01), Su et al.
patent: 5192240 (1993-03-01), Komatsu
patent: 5395650 (1995-03-01), Holt et al.
patent: 5411918 (1995-05-01), Keible et al.
patent: 5520563 (1996-05-01), Wallace
patent: 5599749 (1997-02-01), Hattori
patent: 5614785 (1997-03-01), Wallace et al.
patent: 5656889 (1997-08-01), Niiyama
patent: 5760433 (1998-06-01), Ramer et al.
patent: 5760461 (1998-06-01), Cronin et al.
patent: 5835991 (1998-11-01), Niiyama et al.
patent: 5837935 (1998-11-01), Carper
patent: 5866978 (1999-02-01), Jones et al.
patent: 5882727 (1999-03-01), Corazra
patent: 5895233 (1999-04-01), Higashi
patent: 5921461 (1999-07-01), Kennedy
patent: 5961362 (1999-10-01), Chalamala et al.
patent: 5961750 (1999-10-01), Boffito et al.
patent: 6410847 (2002-06-01), Allen et al.
patent: 6477901 (2002-11-01), Tadigadapa et al.
patent: 6499354 (2002-12-01), Najafi
patent: 6534850 (2003-03-01), Liebeskind
patent: 6589599 (2003-07-01), Conte et al.
patent: 6843936 (2005-01-01), Jacobs
patent: 6897551 (2005-05-01), Amiotti
patent: 6923625 (2005-08-01), Sparks
patent: 7180163 (2007-02-01), Amiotti
patent: 7566957 (2009-07-01), Amiotti
patent: 2003/0085438 (2003-05-01), Habibi et al.
patent: 2003/0138656 (2003-07-01), Sparks
patent: 2005/0158914 (2005-07-01), Amiotti
patent: 0 720 260 (1996-07-01), None
patent: 0 837 502 (1998-04-01), None
patent: 0 845 728 (1998-06-01), None
patent: 09-306920 (1999-05-01), None
patent: 10-188460 (2000-01-01), None
patent: WO 00/61832 (2000-10-01), None
H. Henmi, “Vacuum Packaging for Micro Sensors by Glass-Silicon Anodic Bonding”, Sensors and Actuators A, 43 (1994), 243-248.
T. Corman, “Low APressure Encapsulation Techniques for Silicon Resonators”, Royal Institute of Technology, Stockholm, 1998.
Attachment to form PTO-1465, Request for Inter Partes ReExamination Claims of U.S. Patent No. 6,897,551 vs. Prior Art References, provided by defendant inSAES Getters S.p.A. et al.v.Innovative Micro Technology, Inc., Case No. CV 07-2632 PA (SSx) (C.D. Cal.).
Deliverable D 1.3, (VABOND) Nov. 12, 2002, Project No. IST-2001-34224, Long term stability of vacuum-encapsulated MEMS devices using eutectic wafer bonding.
Deliverable Report, Deliverable D3.7, (VABOND), Project No. IST-2001-34224, Long-term stability of vacuum-encapsulated MEMS devices using eutectic wafer bonding.
Deliverable Report, Deliverable No. D 6.4, Project No. IST-2001-34224 (VABOND), Long term stability of vacuum-encapsulated MEMS devices using eutectic wafer bonding.
Letter to Counsel from Sheppard Mullin.
Project presentation for publication, 1ST, (VABOND), Long-term stability for vacuum-encapsulated MEMS devices using eutectic wafer bonding, Proposal No. 1ST-2001-34224.
SAES Getters S.p.A., v.Innovative Micro Technology, Inc., Defendants Claim Constructions and Invalidity Contentions, with Exhibits.
SAES Getters S.p.A., v.Innovative Micro Technology, Inc., Plaintiffs' Claims Construction and Infringement Contentions (Public Version).
Sparks, Douglas, NanoGetters letter and attachments, dated Oct. 29, 2008.
WSRC-TR-99-00160, Evaluation of H2 Getter Materials for Use in the TRUPACT-II, By R.R. Livingston et al., Sep. 1999.
Notice of Reasons for Rejection from counterpart Japanese Application No. 2003-514571, Mailed: Aug. 19, 2008, Atsushi Aoki, et al.
Abhijeet V. Chavan and Kensall D. Wise, A Batch-Processed Vacuum-Sealed Capacitive Pressure Sensor, Transducers '97, 1997 International Conference on Solid-State Sensors and Actuators, Chicago, Jun. 16-19, 1997, pp. 1449-1452; 0-7803-3829-4/97/$10.00@1997 IEEE.
Notice of Reasons for Rejection, Patent Application No. 2003-514571, Drafting Date : Feb. 8, 2010.

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